He leads an effort to develop atomically precise device fabrication and metrology methods for atom-based Si electronic structures and quantum-based devices that rely on single or few atoms, precisely placed within an epitaxial silicon environment. Hydrogen-based scanning probe lithography is used to enable deterministic placement of individual dopant atoms in the Si lattice. The research is focused on developing atomic fabrication, device design, and low temperature measurements for solid state qubits, analog quantum simulation, and quantum metrology. He has been developing STM methods for the fabrication of atom-scale devices for many years with a more recent focus on the design, fabrication and measurement of quantum devices and synthetic quantum materials.
He has also had extensive interactions with the semiconductor industry with a technical focus on optical column design, hardware control, statistics, and electromagnetic modeling in support of semiconductor metrology. Scientific and industrial impacts include Scatterfield microscopy, hybrid metrology, optical Fourier normalization, structured illumination for defect inspection and overlay, advanced optical simulation, and sub-15 nm optical imaging. This project is a leading effort in high-resolution optical imaging and deep sub-wavelength optical metrology.